IGNACIO
MARTIL DE LA PLAZA
Catedrático de universidad
Instituto de Ciencia de Materiales de Madrid
Madrid, EspañaPublikationen in Zusammenarbeit mit Forschern von Instituto de Ciencia de Materiales de Madrid (15)
2005
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Oxygen to silicon ratio determination of SiOxHy thin films
Thin Solid Films, Vol. 492, Núm. 1-2, pp. 232-235
2003
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Bonding configuration and density of defects of SiOxH y thin films deposited by the electron cyclotron resonance plasma method
Journal of Applied Physics, Vol. 94, Núm. 12, pp. 7462-7469
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Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films
Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1019-1029
2002
1999
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Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, Núm. 4, pp. 1263-1268
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Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperature
Thin Solid Films, Vol. 343-344, Núm. 1-2, pp. 437-440
1998
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Deposition of SiNx: H thin films by the electron cyclotron resonance and its application to Al/SiNx:H/Si structures
Journal of Applied Physics, Vol. 83, Núm. 1, pp. 332-338
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Deposition of low temperature Si-based insulators by the electron cyclotron resonance plasma method
Thin Solid Films, Vol. 317, Núm. 1-2, pp. 116-119
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Good quality Al/SiNx:H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method
Journal of Applied Physics, Vol. 83, Núm. 1, pp. 600-603
1997
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The influence of SiNx:H film properties on the electrical characteristics of metal-insulator-semiconductor devices
Semiconductor Science and Technology, Vol. 12, Núm. 12, pp. 1650-1653
1996
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Properties of a-SiNx.: H films deposited at room temperature by the electron cyclotron resonance plasma method
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, Vol. 73, Núm. 3, pp. 487-502
1995
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Analysis of the oxygen contamination present in SiNx films deposited by electron cyclotron resonance
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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Influence of the deposition parameters on the bonding and optical properties of SiNx ECR films
Journal of Non-Crystalline Solids, Vol. 187, pp. 329-333
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Role of oxygen on the dangling bond configuration of low oxygen content SiNx:H films deposited at room temperature
Applied Physics Letters, Vol. 67, pp. 3263