Publicaciones (93) Publicaciones de ENRIQUE SAN ANDRÉS SERRANO Ver datos de investigación

2023

  1. Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting

    Semiconductor Science and Technology, Vol. 38, Núm. 2

  2. Fabrication of TiOx, by High Pressure Sputtering for Selective Contact in Photovoltaic Cells

    2023 14th Spanish Conference on Electron Devices (CDE)

  3. High Pressure Sputtering of Mo Targets in Mixed Ar/O2/H2Atmospheres for Hole Selective Contacts in Photovoltaic Cells

    2023 14th Spanish Conference on Electron Devices (CDE)

  4. High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs

    Materials Science in Semiconductor Processing, Vol. 153

  5. Inversion Charge Study in TMO Hole-Selective Contact-Based Solar Cells

    IEEE Journal of Photovoltaics, Vol. 13, Núm. 5, pp. 656-662

  6. Ti supersaturated Si by microwave annealing processes

    Semiconductor Science and Technology, Vol. 38, Núm. 2

  7. Transport mechanisms in hyperdoped silicon solar cells

    Semiconductor Science and Technology, Vol. 38, Núm. 12

2022

  1. Electrical transport properties in Ge hyperdoped with Te

    Semiconductor Science and Technology, Vol. 37, Núm. 12

  2. Indium tin oxide obtained by high pressure sputtering for emerging selective contacts in photovoltaic cells

    Materials Science in Semiconductor Processing, Vol. 137

  3. On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodes

    Advanced Electronic Materials, Vol. 8, Núm. 2

2021

  1. High Pressure Sputtering of materials for selective contacts in emerging photovoltaic cells

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  2. Overcoming the solid solubility limit of Te in Ge by ion implantation and pulsed laser melting recrystallization

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

2017

  1. A robust method to determine the contact resistance using the van der Pauw set up

    Measurement: Journal of the International Measurement Confederation, Vol. 98, pp. 151-158

  2. Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs

    IEEE Electron Device Letters, Vol. 38, Núm. 5, pp. 611-614

  3. High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation

    Semiconductor Science and Technology, Vol. 32, Núm. 3

2016

  1. Limitations of high pressure sputtering for amorphous silicon deposition

    Materials Research Express, Vol. 3, Núm. 3

  2. Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 7, pp. 2729-2734

2015

  1. High- k gate stacks on low bandgap tensile strained ge and gesn alloys for field-effect transistors

    ACS Applied Materials and Interfaces, Vol. 7, Núm. 1, pp. 62-67

  2. Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

    Thin Solid Films, Vol. 593, pp. 62-66

  3. Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates

    Semiconductor Science and Technology, Vol. 30, Núm. 3