![Foto de ENRIQUE](/img/uploaded/D949EC4651F6D5049D2D7ACD93439D36.png)
ENRIQUE
SAN ANDRÉS SERRANO
Catedrático de universidad
Argitalpenak (95) ENRIQUE SAN ANDRÉS SERRANO argitalpenak
2024
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Native Oxide Layer Role during Cryogenic-Temperature Ion Implantations in Germanium
Physica Status Solidi (A) Applications and Materials Science
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Optical, Electrical, and Optoelectronic Characterization of Ti-Supersaturated Gallium Arsenide
Physica Status Solidi (A) Applications and Materials Science
2023
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Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting
Semiconductor Science and Technology, Vol. 38, Núm. 2
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Fabrication of TiOx, by High Pressure Sputtering for Selective Contact in Photovoltaic Cells
2023 14th Spanish Conference on Electron Devices (CDE)
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High Pressure Sputtering of Mo Targets in Mixed Ar/O2/H2Atmospheres for Hole Selective Contacts in Photovoltaic Cells
2023 14th Spanish Conference on Electron Devices (CDE)
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High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs
Materials Science in Semiconductor Processing, Vol. 153
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Inversion Charge Study in TMO Hole-Selective Contact-Based Solar Cells
IEEE Journal of Photovoltaics, Vol. 13, Núm. 5, pp. 656-662
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Ti supersaturated Si by microwave annealing processes
Semiconductor Science and Technology, Vol. 38, Núm. 2
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Transport mechanisms in hyperdoped silicon solar cells
Semiconductor Science and Technology, Vol. 38, Núm. 12
2022
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Electrical transport properties in Ge hyperdoped with Te
Semiconductor Science and Technology, Vol. 37, Núm. 12
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Indium tin oxide obtained by high pressure sputtering for emerging selective contacts in photovoltaic cells
Materials Science in Semiconductor Processing, Vol. 137
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On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodes
Advanced Electronic Materials, Vol. 8, Núm. 2
2021
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High Pressure Sputtering of materials for selective contacts in emerging photovoltaic cells
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
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Overcoming the solid solubility limit of Te in Ge by ion implantation and pulsed laser melting recrystallization
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
2017
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A robust method to determine the contact resistance using the van der Pauw set up
Measurement: Journal of the International Measurement Confederation, Vol. 98, pp. 151-158
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Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs
IEEE Electron Device Letters, Vol. 38, Núm. 5, pp. 611-614
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High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation
Semiconductor Science and Technology, Vol. 32, Núm. 3
2016
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Limitations of high pressure sputtering for amorphous silicon deposition
Materials Research Express, Vol. 3, Núm. 3
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Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric
IEEE Transactions on Electron Devices, Vol. 63, Núm. 7, pp. 2729-2734
2015
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High- k gate stacks on low bandgap tensile strained ge and gesn alloys for field-effect transistors
ACS Applied Materials and Interfaces, Vol. 7, Núm. 1, pp. 62-67