Publicaciones en las que colabora con ENRIQUE SAN ANDRÉS SERRANO (33)

2023

  1. Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting

    Semiconductor Science and Technology, Vol. 38, Núm. 2

  2. Ti supersaturated Si by microwave annealing processes

    Semiconductor Science and Technology, Vol. 38, Núm. 2

2022

  1. On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodes

    Advanced Electronic Materials, Vol. 8, Núm. 2

2017

  1. A robust method to determine the contact resistance using the van der Pauw set up

    Measurement: Journal of the International Measurement Confederation, Vol. 98, pp. 151-158

2016

  1. Limitations of high pressure sputtering for amorphous silicon deposition

    Materials Research Express, Vol. 3, Núm. 3

2010

  1. High quality Ti-implanted Si layers above the Mott limit

    Journal of Applied Physics, Vol. 107, Núm. 10

2009

  1. High quality Ti-implanted Si layers above solid solubility limit

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Physical properties of high pressure reactively sputtered hafnium oxide

    Vacuum, Vol. 82, Núm. 12, pp. 1391-1394

2007

  1. High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties

    Journal of Applied Physics, Vol. 102, Núm. 4

  2. Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2

    Applied Physics Letters, Vol. 91, Núm. 19

2006

  1. Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis

    Thin Solid Films, Vol. 515, Núm. 2 SPEC. ISS., pp. 695-699

2005

  1. Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

    2005 Spanish Conference on Electron Devices, Proceedings

  2. On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO 2/Si fabricated by ECR-CVD

    Microelectronics Reliability

  3. Oxygen to silicon ratio determination of SiOxHy thin films

    Thin Solid Films, Vol. 492, Núm. 1-2, pp. 232-235

  4. Physical properties of high pressure reactively sputtered TiO2

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 23, Núm. 6, pp. 1523-1530

2004

  1. Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices

    Semiconductor Science and Technology, Vol. 19, Núm. 2, pp. 133-141

  2. Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method

    Thin Solid Films

  3. Compositional analysis of thin SiO xN y:H films by heavy-ion ERDA, standard RBS, EDX and AES: A comparison

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 217, Núm. 2, pp. 237-245

  4. Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, Núm. 1, pp. 66-70

  5. Influence of H on the composition and atomic concentrations of "N-rich" plasma deposited SiOxNyHz films

    Journal of Applied Physics, Vol. 95, Núm. 10, pp. 5373-5382