Pedro Carlos
Feijoo Guerrero
Publicaciones en las que colabora con Pedro Carlos Feijoo Guerrero (24)
2017
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High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation
Semiconductor Science and Technology, Vol. 32, Núm. 3
2015
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Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering
Thin Solid Films, Vol. 593, pp. 62-66
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Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates
Semiconductor Science and Technology, Vol. 30, Núm. 3
2014
2013
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Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation
Microelectronic Engineering, Vol. 109, pp. 236-239
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Gadolinium scandate by high-pressure sputtering for future generations of high-κ dielectrics
Semiconductor Science and Technology, Vol. 28, Núm. 8
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High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments
Microelectronic Engineering, Vol. 109, pp. 223-226
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High pressure sputtering as a viable technique for future high permittivity dielectric on III-V integration: GdOx on InP demonstration
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1
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Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1
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Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1
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Towards high-k integration with III-V channels: Interface optimization of high pressure sputtered gadolinium oxide on indium phospide
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
2012
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Optimization of scandium oxide growth by high pressure sputtering on silicon
Thin Solid Films, Vol. 526, pp. 81-86
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Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs
IEEE Transactions on Device and Materials Reliability, Vol. 12, Núm. 1, pp. 166-170
2011
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Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering
Microelectronic Engineering, Vol. 88, Núm. 9, pp. 2991-2996
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Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
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Electrical characterization of high-pressure reactive sputtered ScO x films on silicon
Thin Solid Films, Vol. 519, Núm. 7, pp. 2268-2272
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Interface engineering by metal electrode scavenging of Gd2O 3 films sputtered on Si
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
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Positive bias temperature instabilities on sub-nanometer EOT FinFETs
Microelectronics Reliability
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Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study
Microelectronic Engineering