Informática
Fakultät
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Helmholtz-Zentrum Berlin
Berlin, AlemaniaPublikationen in Zusammenarbeit mit Forschern von Helmholtz-Zentrum Berlin (19)
2023
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Large Magnetoresistance of Isolated Domain Walls in La2/3Sr1/3MnO3 Nanowires
Advanced Materials, Vol. 35, Núm. 33
2019
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Ferroelectric Control of Interface Spin Filtering in Multiferroic Tunnel Junctions
Physical Review Letters, Vol. 122, Núm. 3
2015
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Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping
Nature Communications, Vol. 6
2008
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Physical properties of high pressure reactively sputtered hafnium oxide
Vacuum, Vol. 82, Núm. 12, pp. 1391-1394
2007
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High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties
Journal of Applied Physics, Vol. 102, Núm. 4
2006
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Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios
Materials Science in Semiconductor Processing, Vol. 9, Núm. 6, pp. 1020-1024
2005
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Oxygen to silicon ratio determination of SiOxHy thin films
Thin Solid Films, Vol. 492, Núm. 1-2, pp. 232-235
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Physical properties of high pressure reactively sputtered TiO2
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 23, Núm. 6, pp. 1523-1530
2004
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Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices
Semiconductor Science and Technology, Vol. 19, Núm. 2, pp. 133-141
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Compositional analysis of thin SiO xN y:H films by heavy-ion ERDA, standard RBS, EDX and AES: A comparison
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 217, Núm. 2, pp. 237-245
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Influence of H on the composition and atomic concentrations of "N-rich" plasma deposited SiOxNyHz films
Journal of Applied Physics, Vol. 95, Núm. 10, pp. 5373-5382
2003
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Bonding configuration and density of defects of SiOxH y thin films deposited by the electron cyclotron resonance plasma method
Journal of Applied Physics, Vol. 94, Núm. 12, pp. 7462-7469
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Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition
Journal of Applied Physics, Vol. 93, Núm. 11, pp. 8930-8938
2002
2001
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Electrical properties of rapid thermally annealed SiNx:H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy
Semiconductor Science and Technology, Vol. 16, Núm. 7, pp. 534-542
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Molecular models and activation energies for bonding rearrangement in plasma-deposited (formula presented) dielectric thin films treated by rapid thermal annealing
Physical Review B - Condensed Matter and Materials Physics, Vol. 63, Núm. 24
2000
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Compositional analysis of amorphous SiNx:H films by ERDA and infrared spectroscopy
Surface and Interface Analysis, Vol. 30, Núm. 1, pp. 534-537
1999
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Thermally induced changes in the optical properties of SiNx:H films deposited by the electron cyclotron resonance plasma method
Journal of Applied Physics, Vol. 86, Núm. 4, pp. 2055-2061