Publicaciones en colaboración con investigadores/as de Helmholtz-Zentrum Berlin (19)

2006

  1. Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios

    Materials Science in Semiconductor Processing, Vol. 9, Núm. 6, pp. 1020-1024

2005

  1. Oxygen to silicon ratio determination of SiOxHy thin films

    Thin Solid Films, Vol. 492, Núm. 1-2, pp. 232-235

  2. Physical properties of high pressure reactively sputtered TiO2

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 23, Núm. 6, pp. 1523-1530

2004

  1. Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices

    Semiconductor Science and Technology, Vol. 19, Núm. 2, pp. 133-141

  2. Compositional analysis of thin SiO xN y:H films by heavy-ion ERDA, standard RBS, EDX and AES: A comparison

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 217, Núm. 2, pp. 237-245

  3. Influence of H on the composition and atomic concentrations of "N-rich" plasma deposited SiOxNyHz films

    Journal of Applied Physics, Vol. 95, Núm. 10, pp. 5373-5382

2000

  1. Compositional analysis of amorphous SiNx:H films by ERDA and infrared spectroscopy

    Surface and Interface Analysis, Vol. 30, Núm. 1, pp. 534-537