Publicacions en què col·labora amb Pedro Carlos Feijoo Guerrero (18)

2017

  1. High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation

    Semiconductor Science and Technology, Vol. 32, Núm. 3

2015

  1. Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

    Thin Solid Films, Vol. 593, pp. 62-66

  2. Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates

    Semiconductor Science and Technology, Vol. 30, Núm. 3

2014

  1. High pressure sputtering for kigh-k dielectric deposition. Is it worth trying?

    ECS Transactions

2013

  1. Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation

    Microelectronic Engineering, Vol. 109, pp. 236-239

  2. Gadolinium scandate by high-pressure sputtering for future generations of high-κ dielectrics

    Semiconductor Science and Technology, Vol. 28, Núm. 8

  3. High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments

    Microelectronic Engineering, Vol. 109, pp. 223-226

  4. High pressure sputtering as a viable technique for future high permittivity dielectric on III-V integration: GdOx on InP demonstration

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1

  5. Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1

  6. Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1

2012

  1. Optimization of scandium oxide growth by high pressure sputtering on silicon

    Thin Solid Films, Vol. 526, pp. 81-86

  2. Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs

    IEEE Transactions on Device and Materials Reliability, Vol. 12, Núm. 1, pp. 166-170

2011

  1. Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering

    Microelectronic Engineering, Vol. 88, Núm. 9, pp. 2991-2996

  2. Electrical characterization of high-pressure reactive sputtered ScO x films on silicon

    Thin Solid Films, Vol. 519, Núm. 7, pp. 2268-2272

  3. Positive bias temperature instabilities on sub-nanometer EOT FinFETs

    Microelectronics Reliability

  4. Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

    Microelectronic Engineering

2010

  1. Electrical characterization of high-pressure reactive sputtered Sc 2O3 films on silicon

    ECS Transactions

  2. Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

    Journal of Applied Physics, Vol. 107, Núm. 8