Publicaciones en las que colabora con Maria Toledano Luque (18)

2011

  1. Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering

    Microelectronic Engineering, Vol. 88, Núm. 9, pp. 2991-2996

  2. Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  3. Electrical characterization of high-pressure reactive sputtered ScO x films on silicon

    Thin Solid Films, Vol. 519, Núm. 7, pp. 2268-2272

  4. Interface engineering by metal electrode scavenging of Gd2O 3 films sputtered on Si

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  5. Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

    Microelectronic Engineering

2010

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Journal of Applied Physics, Vol. 107, Núm. 11

  2. Electrical characterization of high-pressure reactive sputtered Sc 2O3 films on silicon

    ECS Transactions

  3. Nitridation of Si by N2 electron cyclotron resonance plasma and integration with ScOx deposition

    Journal of the Electrochemical Society, Vol. 157, Núm. 4

  4. Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

    Journal of Applied Physics, Vol. 107, Núm. 8

2009

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Growth of silicon nitride on silicon by electron cyclotron resonance plasma nitridation

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. Interfacial properties of HfO2/SiN/Si gate structures

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

    Journal of Applied Physics, Vol. 104, Núm. 9

  2. Physical properties of high pressure reactively sputtered hafnium oxide

    Vacuum, Vol. 82, Núm. 12, pp. 1391-1394

2007

  1. High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties

    Journal of Applied Physics, Vol. 102, Núm. 4

  2. Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2

    Applied Physics Letters, Vol. 91, Núm. 19

2006

  1. Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios

    Materials Science in Semiconductor Processing, Vol. 9, Núm. 6, pp. 1020-1024

2005

  1. Physical properties of high pressure reactively sputtered TiO2

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 23, Núm. 6, pp. 1523-1530