Publicaciones en las que colabora con Mª Angela Pampillon Arce (18)

2017

  1. Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs

    IEEE Electron Device Letters, Vol. 38, Núm. 5, pp. 611-614

  2. High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation

    Semiconductor Science and Technology, Vol. 32, Núm. 3

2016

  1. Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 7, pp. 2729-2734

2015

  1. High- k gate stacks on low bandgap tensile strained ge and gesn alloys for field-effect transistors

    ACS Applied Materials and Interfaces, Vol. 7, Núm. 1, pp. 62-67

  2. Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

    Thin Solid Films, Vol. 593, pp. 62-66

  3. Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates

    Semiconductor Science and Technology, Vol. 30, Núm. 3

  4. Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric

    Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

2014

  1. Growth and interface engineering of highly strained low bandgap group IV semiconductors

    2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

  2. High pressure sputtering for kigh-k dielectric deposition. Is it worth trying?

    ECS Transactions

2013

  1. Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation

    Microelectronic Engineering, Vol. 109, pp. 236-239

  2. Gadolinium scandate by high-pressure sputtering for future generations of high-κ dielectrics

    Semiconductor Science and Technology, Vol. 28, Núm. 8

  3. High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments

    Microelectronic Engineering, Vol. 109, pp. 223-226

  4. High pressure sputtering as a viable technique for future high permittivity dielectric on III-V integration: GdOx on InP demonstration

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1

  5. Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1

  6. Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1

2012

  1. Optimization of scandium oxide growth by high pressure sputtering on silicon

    Thin Solid Films, Vol. 526, pp. 81-86

2011

  1. Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering

    Microelectronic Engineering, Vol. 88, Núm. 9, pp. 2991-2996

  2. Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

    Microelectronic Engineering